N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.
Drain source voltage
42
V
On-state resistance
28
MΩ
Nominal load current
4.6
A
Clamping energy
3.5
J
BTS142D Electronic Components Features
Type
Main product features
BTS142D
Logic Level Input
Input Protection (ESD)
Thermal shutdown with auto restart
Overload protection
Product Applications
All kinds of resistive, inductive and capacitive loads in switching or linear applications
µC compatible power switch for 12 V DC applications
Replaces electromechanical relays and discrete circuits
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